Search results for "Ohmic contacts"
showing 5 items of 5 documents
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
2019
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
2018
This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Carbon nanotube field-effect devices with asymmetric electrode configuration by contact geometry
2014
We have studied experimentally the conductive properties of single walled carbon nanotube (SWNT) based field-effect type devices, with different contact geometries at the connecting electrode. The device designs are asymmetric with one end of the SWNT having the metal electrode deposited on top and immersing it, while at the other end, the SWNT is on top of the electrode. The devices were made with either gold or palladium as electrode materials, of which the latter resulted in different behavior of the different contact types. This is argued to be caused by the existence of a thin insulating layer of surface adsorbents on the palladium, possibly Pd5O4, the effect of which is enhanced by th…